STL9N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Zener-protected

STL9N60M2
N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Q_g
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
1
2
3
4
PowerFLAT™ 5x6 HV
Features
Order code V_DS @ T_Jmax R_DS(on) max I_D
STL9N60M2
650 V
0.86 Ω 4.8 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
S(1, 2, 3)
12 34
Top View
AM15540v3
Order code
STL9N60M2
Table 1. Device summary
Marking
Package
9N60M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID025655 Rev 2
1/16
www.st.com