STL92N10F7AG Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STL92N10F7AG
Automotive-grade N-channel 100 V, 0.008 Ω typ.,16 A
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
1
2
3
4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
Features
Order code
V_DS
R_DS(on)
max
STL92N10F7AG 100 V 0.0095 Ω
I_D
16 A
P_TOT
5W
• Designed for automotive applications and
AEC-Q101 qualified
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
G(4)
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
12 34
efficient switching.
S(1, 2, 3)
Top View
AM15540v2
Order code
STL92N10F7AG
Table 1. Device summary
Marking
Package
92N10F7
PowerFLAT^TM 5x6
October 2015
This is information on a product in full production.
DocID027022 Rev 2
Packaging
Tape and reel
1/16
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