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STL90N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness | |||
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STL90N6F7
N-channel 60 V, 0.0046 Ω typ., 90 A STripFET⢠F7 Power
MOSFET in a PowerFLAT⢠5x6 package
Datasheet - production data
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PowerFLAT⢠5x6
Figure 1: Internal schematic diagram
Features
Order code
STL90N6F7
VDS
60 V
RDS(on) max
0.0054 Ω
ID
90 A
⢠Among the lowest RDS(on) on the market
⢠Excellent figure of merit (FoM)
⢠Low Crss/Ciss ratio for EMI immunity
⢠High avalanche ruggedness
Applications
⢠Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET⢠F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL90N6F7
Marking
90N6F7
Table 1: Device summary
Package
PowerFLATTM 5x6
Packing
Tape and reel
June 2015
DocID027593 Rev 2
This is information on a product in full production.
1/13
www.st.com
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