STL90N3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate drive power losses

STL90N3LLH6
N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™
Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
Order code
STL90N3LLH6
V_DS
30 V
R_DS(on) max.
0.0045 Ω
I_D
24 A
(1)
1. The value is rated according R_thj-pcb
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
• Very low switching gate charge
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
G(4)
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
12 34
S(1, 2, 3)
Top View
AM15540v2
Order code
STL90N3LLH6
Table 1. Device summary
Marking
Packages
90N3LLH6
PowerFLAT™ 5x6
Packaging
Tape and reel
September 2013
This is information on a product in full production.
DocID15573 Rev 4
1/16
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