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STL90N10F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness | |||
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STL90N10F7
N-channel 100 V, 0.007 Ω typ., 70 A STripFET⢠F7
Power MOSFET in a PowerFLAT⢠5x6 package
Datasheet - production data
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PowerFLAT⢠5x6
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max. ID
PTOT
STL90N10F7 100 V 0.008 Ω 70 A 100 W
⢠Among the lowest RDS(on) on the market
⢠Excellent figure of merit (FoM)
⢠Low Crss/Ciss ratio for EMI immunity
⢠High avalanche ruggedness
Applications
⢠Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET⢠F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL90N10F7
Table 1: Device summary
Marking
Package
90N10F7
PowerFLAT⢠5x6
Packing
Tape and reel
March 2015
DocID024551 Rev 4
This is information on a product in full production.
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www.st.com
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