STL8P4LLF6 Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low on-resistance

STL8P4LLF6
P-channel 40 V, 0.0175 Ω typ.,8 A, STripFET™ F6
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
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PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
Order code
STL8P4LLF6
Marking
8P4F6
Table 1: Device summary
Package
PowerFLAT™ 3.3 x 3.3
Packaging
Tape and reel
March 2015
DocID025617 Rev 2
This is information on a product in full production.
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