STL8N6LF6AG Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL8N6LF6AG
Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™
F6 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max.
ID
PTOT
STL8N6LF6AG 60 V
27 mΩ
32 A 55 W
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Wettable flank package
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL8N6LF6AG
Table 1: Device summary
Marking
Package
8N6LF6
PowerFLAT™ 5x6
Packing
Tape and reel
January 2016
DocID028068 Rev 2
This is information on a product in full production.
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