STL8N6F7 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STL8N6F7
N-channel 60 V, 0.021 Ω typ., 8 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - preliminary data
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code
V_DS
R_DS(on) max
I_D
STL8N6F7
60 V
0.025 Ω
8A
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
Order code
STL8N6F7
1234
AM15810v1
Marking
8N6F7
Table 1: Device summary
Package
PowerFLAT™ 3.3x3.3
Packing
Tape and reel
August 2015
DocID028258 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/12
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