STL8N10F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL8N10F7
N-channel 100 V, 0.017 Ω typ., 35 A, STripFET™ F7
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - preliminary data
Features
1
2
3
4
PowerFLAT™ 3.3 x 3.3
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL8N10F7
V_DS R_DS(on) max I_D
100 V 0.02 Ω 35 A
P_TOT
50 W
• Among the lowest R_DS(on) on the market
• Excellent figure of merit (FoM)
• Low C_rss/C_iss ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
1234
AM15810v1
Order code
STL8N10F7
Table 1. Device summary
Marking
Package
8N10F
PowerFLAT™ 3.3 x 3.3
Packaging
Tape and reel
December 2014
DocID025076 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
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