STL8DN6LF6AG Datasheet, PDF (1/16 Pages) STMicroelectronics – Automotive-grade dual N-channel 60 V

STL8DN6LF6AG
Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A
STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
V_DS R_DS(on) max. I_D
P_TOT
STL8DN6LF6AG 60 V 27 mΩ 32 A 55 W
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Wettable flank package
Applications
 Switching applications
Description
This device is a dual N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STL8DN6LF6AG
Marking
8DN6LF6
Table 1: Device summary
Package
PowerFLAT™ 5x6 double island
Packing
Tape and reel
January 2016
DocID028014 Rev 3
This is information on a product in full production.
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