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STL8DN6LF3 Datasheet, PDF (1/18 Pages) STMicroelectronics – Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package | |||
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STL8DN6LF3
Automotive-grade dual N-channel 60 V, 22.5 m⦠typ., 7.8 A STripFET⢠III
Power MOSFET in a PowerFLAT⢠5x6 double island package
Datasheet â production data
Features
1
2
3
4
PowerFLAT⢠5x6
double island
Order code
STL8DN6LF3
VDS
60 V
RDS(on) max
30 mΩ
ID
7.8 A
⢠Designed for automotive applications and
AEC-Q101 qualified
⢠Logic level VGS(th)
⢠175 °C junction temperature
⢠100% avalanche rated
⢠Wettable flank package
Figure 1. Internal schematic diagram
Applications
⢠Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronicsâ STripFET⢠III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Order code
Table 1. Device summary
Marking
Packages(1)
STL8DN6LF3
8DN6LF3
PowerFLAT⢠5x6 double island
1. For wettable flank option, please contact ST sale offices
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID022261 Rev 5
1/18
www.st.com
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