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STL8DN10LF3 Datasheet, PDF (1/15 Pages) STMicroelectronics – Automotive-grade dual N-channel 100 V
STL8DN10LF3
Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet — production data
Features
3RZHU)/$7Œ[GRXEOHLVODQG
Order code
STL8DN10LF3
VDS
100 V
RDS(on) max
35 mΩ
ID
7.8 A
• Designed for automotive applications and
AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C maximum junction temperature
• 100% avalanche rated
• Wettable flank package
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is a dual N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Order code
STL8DN10LF3
Table 1. Device summary
Marking
Packages
8DN10LF3
PowerFLAT™ 5x6 double island
Packing
Tape and reel
July 2015
This is information on a product in full production.
DocID023009 Rev 6
1/15
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