STL7NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge, Low gate input resistance

STL7NM60N
N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5
MDmesh™ II Power MOSFET
Features
Order code
STL7NM60N
V_{DSS @}
T_JMAX
650 V
R_DS(on)
max.
< 0.90 Ω
I_D
5.8 A⁽¹⁾
1. The value is rated according Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
8⁷
5
11
4
12
14
1
PowerFLAT™ 5x5
Figure 1. Internal schematic diagram
D
D
D
Pin 1
14
13
12 _{11 G}
(not connected)
S2
Drain
10 S
S3
9S
S4 ₅
6
7 ^8S
D
D
D
Top view
Table 1. Device summary
Order code
STL7NM60N
Marking
7NM60N
Package
PowerFLAT™ 5x5
Packaging
Tape and reel
November 2011
Doc ID 18348 Rev 2
1/13
www.st.com
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