STL7N6F7 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-channel 60 V, 0.021 (ohm) typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package

STL7N6F7
N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - preliminary data
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1: Internal schematic diagram
1(D) 2(D) 3(G)
D
S
Features
Order code
V_DS
R_DS(on) max
I_D
STL7N6F7
60 V
0.025 Ω
7A
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6(D) 5(D) 4(S)
Bottom view
AM11269v1
Order code
STL7N6F7
Marking
ST7N
Table 1: Device summary
Package
PowerFLAT™ 2x2
Packing
Tape and reel
August 2015
DocID028257 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/11
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