STL75N3LLZH5 Datasheet, PDF (1/9 Pages) STMicroelectronics – Low gate drive power losses

Features
STL75N3LLZH5
N-channel 30 V, 0.0055 Ω, 19 A PowerFLAT™ (5x6)
STripFET™ V Power MOSFET
Preliminary data
Type
STL75N3LLZH5
V_DSS
30 V
R_DS(on)
max
<0.0061 Ω
I_D
19 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
■ Built in G-S Zener diodes
PowerFLAT™ ( 5x6 )
Application
■ Switching applications
Figure 1. Internal schematic diagram
Description
The STL75N3LLZH5 is an N-channel
STripFET™V Power MOSFET which has been
designed to achieve very low on-state resistance
providing also one of the best-in-class figure of
merit (FOM).
Table 1. Device summary
Order code
Marking
STL75N3LLZH5
75N3LLZH5
Package
PowerFLAT™ (5x6)
Packaging
Tape and reel
July 2010
Doc ID 17661 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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