STL6P3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low on-resistance

STL6P3LLH6
P-channel 30 V, 0.024 Ω typ., 6 A STripFET™ H6
Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package
Datasheet - production data
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2
3
4
PowerFL AT™ 3.3 x 3.3
Figure 1: Internal schematic diagram
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code Marking Package Packaging
STL6P3LLH6
6P3L
PowerFLAT^TM
3.3 x 3.3
Tape and
reel
Features
Order code VDS
STL6P3LLH6 30 V
RDS(on) max
0.03 Ω
ID
PTOT
6 A 2.9 W
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
November 2014
DocID023668 Rev 3
This is information on a product in full production.
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