STL6NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5) ultra low gate charge MDmesh™ II Power MOSFET

STL6NM60N
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT™ (5x5)
ultra low gate charge MDmesh™ II Power MOSFET
Features
Type
STL6NM60N
V_{DSS @}
T_JMAX
650 V
R_DS(on)
Max
< 0.92 Ω
I_D
5.75 A⁽¹⁾
1. The value is rated according Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
PowerFLAT (5x5)
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL6NM60N
Marking
L6NM60N
Package
PowerFLAT™ (5x5)
Packaging
Tape & reel
November 2007
Rev 3
1/12
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