STL6N2VH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 20 V, 0.025 typ., 6 A STripFET V Power MOSFET in PowerFLAT 2x2 package

STL6N2VH5
Features
N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V
Power MOSFET in PowerFLAT™ 2x2 package
Datasheet − preliminary data
Order code V_DSS R_DS(on) max.
I_D P_TOT
STL6N2VH5 20 V ^{0.03 Ω (VGS=4.5 V)} 6 A 2.4 W
0.04 Ω (V_GS=2.5 V)
■ Very low switching gate charge
■ Very low thermal resistance
■ Conduction losses reduced
■ Switching losses reduced
■ 2.5 V gate drive
■ Very low threshold device
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1. Internal schematic diagram
1(D)
2(D)
3(G)
D
S
6(D)
5(D)
4(S)
AM11269v1
Table 1. Device summary
Order code
STL6N2VH5
Marking
STD1
Package
PowerFLAT™ 2x2
Packaging
Tape and reel
January 2013
Doc ID 023150 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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