STL65DN3LLH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET

STL65DN3LLH5
Dual N-channel 30 V, 0.0059 Ω, 19 A
PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
Features
Type
STL65DN3LLH5
V_DSS
30 V
R_DS(on)
max
<0.0065 Ω
I_D
19 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5^th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R_DS(on)*Q_g, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™ (5x6)
Double island
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STL65DN3LLH5
65DN3LLH5
Package
PowerFLAT™(5x6)
Double island
Packaging
Tape and reel
December 2010
Doc ID 18323 Rev 1
1/12
www.st.com
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