STL62P3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STL62P3LLH6
P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6
Power MOSFET in a PowerFLAT 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL62P3LLH6
VDS
-30 V
RDS(on) max
10.5 mΩ
ID
-62 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL62P3LLH6
.
Table 1: Device summary
Marking
Package
62P3LLH6
PowerFLAT^TM 5x6
Packing
Tape and reel
October 2016
DocID025836 Rev 6
This is information on a product in full production.
1/16
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