STL60N3LLH5 Datasheet, PDF (1/12 Pages) STMicroelectronics – High avalanche ruggedness

STL60N3LLH5
N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT™ (5x6)
STripFET™ V Power MOSFET
Features
Type
STL60N3LLH5
V_DSS
30 V
R_DS(on)
max
<0.0071 Ω
I_D
17 A ⁽¹⁾
1. The value is rated according R_thj-pcb
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
PowerFLAT™ ( 5x6 )
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL60N3LLH5
Marking
60N3LLH5
Package
PowerFLAT™ (5x6)
Packaging
Tape and reel
March 2010
Doc ID 17268 Rev 1
1/12
www.st.com
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