STL60N32N3LL Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL60N32N3LL
Dual N-channel 30 V, 0.005 Ω, 15 A PowerFLAT™ 5x6
asymmetrical double island, STripFET™ Power MOSFET
Features
Order code
V_DSS R_DS(on)
I_D
STL60N32N3LL ^{Q1 30 V < 0.0092 Ω 13.6 A}
Q₂ 30 V < 0.0055 Ω 15 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This device is a dual N-channel Power MOSFET
which utilizes the latest generation of design rules
for ST's proprietary STripFET™ V and
STripFET™ VI DeepGATE™ technology. The
lowest available RDS(on)* Qg in this chip scale
package renders the device suitable for the most
demanding DC-DC converter applications, where
high power density is required.
4
3
2
1
D1
S2
S1/D2
G1
G2
5
6
7
8
PowerFLAT™5x6 asymmetrical
double island
Figure 1. Internal schematic diagram
 ^3
1
$ 
 ^3
$ 
 3
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1
(top view)
$ 
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Table 1. Device summary
Order code
Marking
STL60N32N3LL
60N32N3LL
Package
PowerFLAT™5x6
asymmetrical double island
Packaging
Tape and reel
February 2012
Doc ID 17266 Rev 3
1/14
www.st.com
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