STL50DN6F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STL50DN6F7
Dual N-channel 60 V, 9 mΩ typ., 57 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 double island package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL50DN6F7
VDS
60 V
RDS(on) max.
11 mΩ
ID
57 A
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This dual N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL50DN6F7
Marking
50DN6F7
Table 1: Device summary
Package
PowerFLAT™ 5x6 double island
Packaging
Tape and reel
November 2015
DocID028132 Rev 2
This is information on a product in full production.
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