STL4N80K5 Datasheet, PDF (1/17 Pages) STMicroelectronics – Ultra low gate charge

STL4N80K5
N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5
Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet − production data
1
2
3
4
PowerFLAT™ 5x6 VHV
Features
Order code
STL4N80K5
V_DS
800 V
R_DS(on)max.
2.5 Ω
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener protected
I_D
2.5 A
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v1
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in on-
resistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
Order code
STL4N80K5
Table 1. Device summary
Marking
Package
4N80K5
PowerFLAT™ 5x6 VHV
Packaging
Tape and reel
May 2015
This is information on a product in full production.
DocID025574 Rev 2
1/17
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