STL4N10F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel enhancement mode

STL4N10F7
N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 3.3x3.3
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL4N10F7
V_DS
100 V
R_{DS(on) max}
0.07 Ω
I_D
4.5 A
• N-channel enhancement mode
• Lower R_DS(on) x area vs previous generation
• 100% avalanche rated
Applications
• Switching applications
Description
th
This device utilizes the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
S(1, 2, 3)
Order code
STL4N10F7
1234
AM15810v1
Table 1. Device summary
Marking
Package
4N1F7
PowerFLAT™ 3.3x3.3
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID023898 Rev 4
1/14
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