STL4LN80K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – 100% avalanche tested

STL4LN80K5
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5
Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet - preliminary data
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2
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PowerFLAT™ 5x6 VHV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
Features
Order code
STL4LN80K5
VDS
800 V
RDS(on) max.
ID
2.6 Ω
3A
 Industry’s lowest R_DS(on) * area
 Industry’s best FoM (figure of merit)
 Ultra low-gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STL4LN80K5
Marking
4LN80K5
Table 1: Device summary
Package
PowerFLAT™ 5x6 VHV
Packing
Tape and reel
May 2015
DocID027815 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
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