STL45P3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STL45P3LLH6
P-channel -30 V, 11 mΩ typ., -45 A STripFET™ H6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL45P3LLH6
VDS
-30 V
RDS(on) max
13 mΩ
ID
-45 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STL45P3LLH6
Table 1: Device summary
Marking
Package
45P3LLH6
PowerFLAT™ 5x6
Packing
Tape and reel
April 2016
DocID025822 Rev 1
This is information on a product in full production.
1/15
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