STL42PLLF6 Datasheet, PDF (1/16 Pages) STMicroelectronics – High avalanche ruggedness

STL42P6LLF6
P-channel -60 V, 23 mΩ typ., -42 A STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL42P6LLF6
VDS
-60 V
RDS(on) max.
26 mΩ
ID
-42 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL42P6LLF6
Table 1: Device summary
Marking
Package
42P6LLF6
PowerFLAT™ 5x6
Packaging
Tape and reel
November 2016
DocID025457 Rev 4
This is information on a product in full production.
1/16
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