STL42P4LLF6 Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL42P4LLF6
P-channel 40 V, 0.0155 Ω typ.,42 A, STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
Order code
STL42P4LLF6
VDS
40 V
RDS(on) max.
0.018 Ω
ID
42 A
PTOT
75 W
1
2
3
4
PowerFLAT™ 5x6
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
G(4)
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
For the P-channel Power MOSFET, current
polarity of voltages and current have to be
reversed.
S(1, 2, 3)
Order code
STL42P4LLF6
AM01475v4
Table 1: Device summary
Marking
Package
42P4LLF6
PowerFLAT™ 5x6
Packaging
Tape and reel
March 2015
DocID025618 Rev 2
This is information on a product in full production.
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