STL42N65M5 Datasheet, PDF (1/14 Pages) STMicroelectronics – Low gate input resistance

STL42N65M5
N-channel 650 V, 0.070 Ω, 34 A MDmesh™ V Power MOSFET
in PowerFLAT™ 8x8 HV package
Datasheet — preliminary data
Features
Order code
STL42N65M5
V_DSS @
T_Jmax
710 V
R_DS(on)
max
< 0.079 Ω
I_D
34 A⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
3
3
'
"OTTOMVIEW
$
0OWER&,!4˜X(6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL42N65M5
Marking
42N65M5
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
April 2012
Doc ID 17443 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
14