STL40N10F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – Among the lowest RDS on the market

STL40N10F7
N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL40N10F7
V_DS
100 V
R_DS(on) max.
0.024Ω
I_D
10 A
P_TOT
5W
 Among the lowest R_DS(on) on the market
 Excellent figure of merit (FoM)
 Low C_rss/C_iss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL40N10F7
Table 1: Device summary
Marking
Package
40N10F7
PowerFLAT^TM 5x6
Packing
Tape and reel
December 2015
DocID024671 Rev 3
This is information on a product in full production.
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