STL40C30H3LL Datasheet, PDF (1/19 Pages) STMicroelectronics – Low gate drive power losses

STL40C30H3LL
N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A
STripFET™ VI Power MOSFET in a PowerFLAT 5x6 d. i. package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™5x6
double island
Figure 1. Internal schematic diagram
Order code Channel V_DS R_DS(on) max I_D
N
STL40C30H3LL
P
0.021 Ω @ 10 V 10 A
30 V
0.03 Ω @ 10 V 8 A
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is a complementary N-channel and P-
channel Power MOSFET developed using
STripFET™ V (P-channel) and STripFET™ VI
DeepGATE™ (N-channel) technologies. The
resulting device exhibits low on-state resistance
and an FOM among the lowest in its voltage
class.
AM00623v2
Order code
Table 1. Device summary
Marking
Packages
Packaging
STL40C30H3LL
40C30H3L
PowerFLAT 5x6 double island
Tape and reel
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
April 2014
This is information on a product in full production.
DocID023874 Rev 5
1/19
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