STL3NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STL3NM60N
N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET
in a PowerFLAT™ 3.3 x 3.3 HV package
Datasheet - production data
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PowerFLAT™ 3.3x3.3 HV
Features
Order code
STL3NM60N
R_DS(on) max.
1.8 Ω
I_D
2.2 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Application
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Bottom View
Order code
STL3NM60N
Table 1. Device summary
Marking
Package
3NM60N
PowerFLAT™ 3.3 x 3.3 HV
Packaging
Tape and reel
November 2014
This is information on a product in full production.
DocID022795 Rev 2
1/13
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