STL38N65M5 Datasheet, PDF (1/17 Pages) STMicroelectronics – Low input capacitance and gate charge

STL38N65M5
Features
N-channel 650 V, 0.090 Ω typ., 22.5 A MDmesh™ V
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet — preliminary data
Order code
STL38N65M5
V_DS @
T_Jmax
710 V
R_DS(on)
max
0.105 Ω
I_D
(1)
22.5 A
1. The value is rated according to R_thj-case and limited by
package.
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
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Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STL38N65M5
Marking
38N65M5
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
January 2013
Doc ID 023239 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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