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| STL35NF3LL Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET | |||
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STL35NF3LL
N-CHANNEL 30V - 0.0055⦠- 35A PowerFLATâ¢
LOW GATE CHARGE STripFET⢠MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STL35NF3LL
30 V < 0.007 ⦠35 A
s TYPICAL RDS(on) = 0.0055â¦
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique âSTripFETâ¢â technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT⢠package allows a significant reduction in
board space without compromising performance.
PowerFLATâ¢(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(#)
IDM (q)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kâ¦)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
October 2001
Value
30
30
± 15
35
22
140
80
0.64
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
â55 to 150
°C
(1)ISD<35A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX
(2) Starting Tj = 25°C, ID = 30A, VDD = 27.5V
1/6
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