STL34N65M5 Datasheet, PDF (1/15 Pages) STMicroelectronics – Low gate input resistance

STL34N65M5
N-channel 650 V, 0.099 Ω typ., 22.5 A MDmesh™ V
Power MOSFET in PowerFLAT™ 8x8 HV package
Datasheet - production data
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Features
Order code
STL34N65M5
V_DS @
T_Jmax
710 V
R_DS(on)
max
0.120 Ω
I_D
22.5 A⁽¹⁾
1. The value is rated according to R_thj-case and limited by
package.
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
Applications
• Switching applications
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Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL34N65M5
Table 1. Device summary
Marking
Package
34N65M5
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID023325 Rev 1
1/15
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