STL33N65M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

STL33N65M2
N-channel 650 V, 0.124 Ω typ., 20 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL33N65M2
VDS
650 V
RDS(on)max
0.154 Ω
ID
20 A
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STL33N65M2
Table 1: Device summary
Marking
Package
33N65M2
PowerFLAT™ 8x8 HV
Packing
Tape and reel
April 2016
DocID026089 Rev 3
This is information on a product in full production.
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