STL33N60M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge

STL33N60M2
N-channel 600 V, 0.115 Ω typ., 22 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL33N60M2
VDS @ TJmax
650 V
RDS(on)max
0.135 Ω
ID
22 A
Features
 Extremely low gate charge
 Excellent output capacitance (C_OSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STL33N60M2
Marking
33N60M2
Table 1: Device summary
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2015
DocID024325 Rev 3
This is information on a product in full production.
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