STL30P3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – High avalanche ruggedness

STL30P3LLH6
P-channel 30 V, 0.024 Ω typ., 9 A STripFET™ VI DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet − preliminary data
Features
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
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Order code V_DS R_DS(on) max I_D P_TOT
STL30P3LLH6 30 V
0.03 Ω
9 A 4.8 W
• R_DS(on) * Q_g industry benchmark
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STL30P3LLH6
Table 1. Device summary
Marking
Package
30P3L
TM
PowerFLAT 5x6
Packaging
Tape and reel
Note:
For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
January 2014
DocID023669 Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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