STL30NF3LL Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET

STL30NF3LL
N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STL30NF3LL
30 V < 0.010 Ω 30 A
s TYPICAL R_DS(on) = 0.008Ω
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allows a significant reduction in
board space without compromising performance.
PowerFLAT™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(#)
Drain Current (continuos) at T_C = 25°C
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
November 2001
Value
30
30
± 16
30
19
120
80
0.64
– 55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
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