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| STL28NF3LL Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET | |||
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STL28NF3LL
N-CHANNEL 30V - 0.0055⦠- 28A PowerFLATâ¢
LOW GATE CHARGE STripFET⢠MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STL28NF3LL
30 V < 0.0065 ⦠28 A
s TYPICAL RDS(on) = 0.0055â¦
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique âSTripFETâ¢â technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT⢠package allows a significant reduction in
board space without compromising performance.
PowerFLATâ¢(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID(#)
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
November 2002
Value
30
30
± 16
28
17.5
112
80
0.64
2
â55 to 150
(1) Starting Tj = 25°C, ID = 14A, VDD = 18V
Unit
V
V
V
A
A
A
W
W/°C
J
°C
1/6
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