STL27N15 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 150V - 0.045 W - 27A PowerFLAT LOW GATE CHARGE STripFET MOSFET

STL27N15
N-CHANNEL 150V - 0.045 Ω - 27A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
TARGET DATA
TYPE
V_DSS
R_DS(on)
I_D
STL15N15
150 V <0.060 Ω 27 A⁽¹⁾
s TYPICAL R_DS(on) = 0.045 Ω
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE (1mm MAX)
s VERY LOW THERMAL RESISTANCE
s VERY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique "STripFET™" process has specifically been
designed to minimize input capacitance and gate charge.
It’s therefore suitable as primary switch in advanced high
efficiency, high frequency isolated DC-DC converter for
telecom an computer application. The new
PowerFLAT™ package allows e significant reduction in a
board space without compromising performance.
APPLICATIONS
s HIGH-EFFICIENCY ISOLATED DC-DC
CONVERTERS
s TELECOM AND BATTERY CHARGER
ADAPTOR
s SYNCHRONOUS RECTIFICATION
Ordering Information
SALES TYPE
STL27N15
MARKING
L27N15
PowerFLAT™(6x5)
INTERNAL SCHEMATIC DIAGRAM
PACKAGE
PowerFLAT
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C (Steady State)
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(3)
P_tot(2)
Drain Current (pulsed)
Total Dissipation at T_C = 25°C (Steady State)
P_tot(1)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽⁵⁾ Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Operating Junction Temperature
Value
150
150
± 20
6
4
24
4
80
0.03
TBD
-55 to 150
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
°C
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