STL26NM60N Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET

STL26NM60N
N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV
ultra low gate charge MDmesh™ II Power MOSFET
Features
Order code
STL26NM60N
V_DSS @
T_Jmax
650 V
R_DS(on)
max
< 0.185 Ω
I_D
19 A ⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
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Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STL26NM60N
Marking
26NM60N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2011
Doc ID 18472 Rev 2
1/14
www.st.com
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