STL260N3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low gate charge

STL260N3LLH6
N-channel 30 V, 0.0011 Ω typ., 260 A STripFET™ H6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet − production data
Features
1
2
3
4
Order code
STL260N3LLH6
V_DS
30 V
R_DS(on) max
I_D
0.0013 Ω 260 A ⁽¹⁾
1. The value is rated according R_thj-c
• Very low on-resistance R_DS(on)
• Very low gate charge
• High avalanche ruggedness
PowerFLAT™5x6
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
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$0Y
Order code
STL260N3LLH6
Table 1. Device summary
Marking
Package
260N3LLH6
PowerFLAT™ 5x6
Packaging
Tape and reel
November 2014
This is information on a product in full production.
DocID026659 Rev 2
1/15
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