STL25N60M2-EP Datasheet, PDF (1/16 Pages) STMicroelectronics – Extremely low gate charge

STL25N60M2-EP
N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
Order code
VDS @ TJmax RDS(on) max. ID
5
STL25N60M2-EP
650 V
0.206 Ω 16 A
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
 Extremely low gate charge
 Excellent output capacitance (C_OSS) profile
 Very low turn-off switching losses
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 Tailored for Very High Frequency
Converters (f > 150 kHz)
Order code
STL25N60M2-EP
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Marking
Package
25N60M2EP
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2015
DocID027254 Rev 3
This is information on a product in full production.
1/16
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