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| STL24N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package | |||
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STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus⢠low Qg
Power MOSFET in a PowerFLAT⢠8x8 HV package
Datasheet â production data
Features
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Figure 1. Internal schematic diagram
D(3)
G(1)
S(2)
AM01476v1
Order code VDS @ TJmax RDS(on) max ID
STL24N60M2
650 V
0.21 Ω 18 A
⢠Extremely low gate charge
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener protected
Applications
⢠Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmeshâ¢
technology: MDmesh II Plus⢠low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL24N60M2
Table 1. Device summary
Marking
Package
24N60M2
PowerFLAT⢠8x8 HV
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID024777 Rev 2
1/15
www.st.com
15
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