STL24N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 0.195 (ohm) typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

STL24N60DM2
N-channel 600 V, 0.195 Ω typ., 15 A MDmesh™ DM2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
Order code
VDS @ TJmax RDS(on) max.
ID
5
STL24N60DM2
650 V
0.220 Ω 15 A
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STL24N60DM2
Table 1: Device summary
Marking
Package
24N60DM2
PowerFLAT™ 8x8 HV
Packing
Tape and reel
July 2016
DocID026017 Rev 3
This is information on a product in full production.
1/15
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