STL23NS3LLH7 Datasheet, PDF (1/14 Pages) STMicroelectronics – Embedded Schottky diode

STL23NS3LLH7
N-channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power
MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3
Datasheet - production data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
G(4)
Features
Order code
STL23NS3LLH7
VDS
30 V
RDS(on) max
0.0037 Ω
ID
23 A
 Very low on-resistance
 Very low Q_g
 High avalanche ruggedness
 Embedded Schottky diode
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
S(1, 2, 3)
Order code
STL23NS3LLH7
Table 1: Device summary
Marking
Package
23NS3
PowerFLAT^TM 3.3 x 3.3
Packing
Tape and reel
May 2015
DocID025074 Rev 3
This is information on a product in full production.
1/14
www.st.com