STL23NM60ND Datasheet, PDF (1/11 Pages) STMicroelectronics – N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) PowerFLAT™ (8x8) HV

STL23NM60ND
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) PowerFLAT™ (8x8) HV
Preliminary data
Features
Type
STL23NM60ND
V_DSS
(@T_jmax)
650 V
R_DS(on) max
I_D
< 0.180 Ω 19.5 A⁽¹⁾
1. This value is rated according to R_thj-case.
■ The worldwide best R_DS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
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Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
STL23NM60ND
Marking
23NM60ND
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
April 2010
Doc ID 17439 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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