STL23NM50N Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package

STL23NM50N
N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET
in a PowerFLAT™ 8x8 HV package
Datasheet — production data
Features
Type
STL23NM50N
V_DSS @
T_Jmax
550 V
R_DS(on)
max
< 0.210 Ω
I_D
14 A ⁽¹⁾
1. The value is rated according to R_thj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
3
3
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"OTTOMVIEW
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Figure 1. Internal schematic diagram
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'
3
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Table 1. Device summary
Order code
STL23NM50N
Marking
23NM50N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
October 2012
This is information on a product in full production.
Doc ID 022339 Rev 2
1/13
www.st.com
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